- 您现在的位置：买卖IC网 > Sheet目录490 > NTMD6N03R2 (ON Semiconductor)MOSFET PWR N-CH DL 6A 30V 8SOIC
NTMD6N03R2, NVMD6N03R2
ELECTRICAL CHARACTERISTICS (T C = 25 ? C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m A)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 24 Vdc, V GS = 0 Vdc, T J = 25 ? C)
(V DS = 24 Vdc, V GS = 0 Vdc, T J = 125 ? C)
Gate--Body Leakage Current
(V GS = ? 20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
30
--
--
--
--
--
30
--
--
--
--
--
1.0
20
100
Vdc
mV/ ? C
m Adc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain--to--Source On--State Resistance
(V GS = 10 Vdc, I D = 6 Adc)
(V GS = 4.5 Vdc, I D = 3.9 Adc)
Forward Transconductance
(V DS = 15 Vdc, I D = 5.0 Adc)
V GS(th)
R DS(on)
g FS
1.0
--
--
--
--
1.8
4.6
0.024
0.030
10
2.5
--
0.032
0.040
--
Vdc
mV/ ? C
Ω
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
--
680
950
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 24 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
--
--
210
70
300
135
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn--On Delay Time
t d(on)
--
9
18
ns
Rise Time
Turn--Off Delay Time
Fall Time
(V DD = 15 Vdc, I D = 1 A,
V GS = 10 V,
R G = 6 Ω )
t r
t d(off)
t f
--
--
--
22
45
45
40
80
80
Turn--On Delay Time
t d(on)
--
13
30
ns
Rise Time
Turn--Off Delay Time
Fall Time
(V DD = 15 Vdc, I D = 1 A,
V GS = 4.5 V,
R G = 6 Ω )
t r
t d(off)
t f
--
--
--
27
22
34
50
40
70
Gate Charge
(V DS = 15 Vdc,
V GS = 10 Vdc,
I D = 5 A)
Q T
Q 1
Q 2
Q 3
--
--
--
--
19
2.4
5.0
4.3
30
--
--
--
nC
BODY--DRAIN DIODE RATINGS (Note 3)
Diode Forward On--Voltage
Reverse Recovery Time
(I S = 1.7 Adc, V GS = 0 V)
(I S = 1.7 Adc, V GS = 0 V, T J = 150 ? C)
(I S = 5 A, V GS = 0 V,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
--
--
--
--
--
0.75
0.62
26
11
15
1.0
--
--
--
--
Vdc
ns
Reverse Recovery Stored Charge
(I S = 5 A, dI S /dt = 100 A/ m s, V GS = 0 V)
Q RR
--
0.015
--
m C
3. Pulse Test: Pulse Width ? 300 m s, Duty Cycle ? 2%.
4. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTMD6P02R2G
MOSFET PWR P-CHAN DUAL 20V 8SOIC
NTMFD4901NFT1G
MOSFET N-CH DUAL 30V 8DFN
NTMFS4108NT1G
MOSFET N-CHAN 22A 30V SO-8FL
NTMFS4119NT1G
MOSFET N-CHAN 18A 30V SO-8FL
NTMFS4120NT1G
MOSFET N-CHAN 18A 30V SO-8FL
NTMFS4121NT1G
MOSFET N-CHAN 17A 30V SO-8FL
NTMFS4122NT1G
MOSFET N-CHAN 14A 30V SO-8FL
NTMFS4701NT3G
MOSFET N-CH 12.3A 30V SO8 FL
相关代理商/技术参数
NTMD6N03R2G
功能描述:MOSFET NFET 30V SPCL TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMD6N04R2
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
NTMD6N04R2G
功能描述:MOSFET NFET SO8 40V 5.8A 0.027R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMD6P02
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 6 A, 20 V, Pa??Channel SOICa??8, Dual
NTMD6P02R2
功能描述:MOSFET 20V 6A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMD6P02R2/D
制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 6 Amps， 20 Volts
NTMD6P02R2G
功能描述:MOSFET 20V 6A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMD6P02R2SG
功能描述:MOSFET PFET20V 6A .033R TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube